Silicon carbide device is a wide band gap device made of the third generation semiconductor material SiC, which has high breakdown voltage and low on impedance. Galaxy microelectronics has launched 650V and 1200V silicon carbide Schottky diodes, providing an ideal solution for engineers to design power conversion circuits for various applications.

Product features：

1. It has better switching characteristics and higher reliability than silicon.
2. Low conduction loss, temperature independent zero reverse recovery.
3. TJ up to 175 ° C, high surge current capability.

Scope of application:

5G infrastructure, new energy vehicle charging pile and rail transit, etc